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mrf6vp3450hr6 MRF6VP3450HR5 mrf6vp3450hsr6 mrf6vp3450hsr5 1 rf device data freescale semiconductor rf power field effect transistors n - channel enhancement - mode lateral mosfets designed for broadband commercial an d industrial applications with frequencies from 470 to 860 mhz. the high gain and broadband performance of these devices make them ideal for large - signal, common - source amplifier applications in 50 volt analog or digital television transmitter equipment. ? typical dvb - t ofdm performance: v dd = 50 volts, i dq = 1400 ma, p out = 90 watts avg., f = 860 mhz, 8k mode, 64 qam power gain ? 22.5 db drain efficiency ? 28% acpr @ 4 mhz offset ? - 62 dbc @ 4 khz bandwidth ? typical broadband two - tone performance: v dd = 50 volts, i dq = 1400 ma, p out = 450 watts pep, f = 470 - 860 mhz power gain ? 22 db drain efficiency ? 44% im3 ? - 29 dbc ? capable of handling 10:1 vswr, all phase angles, @ 50 vdc, 860 mhz, 90 watts avg. (dvb - t ofdm signal, 10 db par, 7.61 mhz channel bandwidth) features ? characterized with series equivalent large - signal impedance parameters ? internally input matched for ease of use ? qualified up to a maximum of 50 v dd operation ? integrated esd protection ? excellent thermal stability ? designed for push - pull operation ? greater negative gate - source voltage range for improved class c operation ? rohs compliant ? in tape and reel. r6 suffix = 150 units per 56 mm, 13 inch reel. r5 suffix = 50 units per 56 mm, 13 inch reel. table 1. maximum ratings rating symbol value unit drain - source voltage v dss - 0.5, +110 vdc gate - source voltage v gs - 6.0, +10 vdc storage temperature range t stg - 65 to +150 c case operating temperature t c 150 c operating junction temperature t j 200 c document number: mrf6vp3450h rev. 2, 9/2008 freescale semiconductor technical data 860 mhz, 450 w, 50 v lateral n - channel broadband rf power mosfets mrf6vp3450hr6 MRF6VP3450HR5 mrf6vp3450hsr6 mrf6vp3450hsr5 case 375d - 05, style 1 ni - 1230 mrf6vp3450hr6(hr5) parts are push - pull (top view) rf outa /v dsa 31 42 rf outb /v dsb rf ina /v gsa rf inb /v gsb figure 1. pin connections case 375e - 04, style 1 ni - 1230s mrf6vp3450hsr6(hsr5) ? freescale semiconductor, inc., 2008. all rights reserved.
2 rf device data freescale semiconductor mrf6vp3450hr6 MRF6VP3450HR5 mrf6vp3450hsr6 mrf6vp3450hsr5 table 2. thermal characteristics characteristic symbol value (1,2) unit thermal resistance, junction to case case temperature 80 c, 90 w cw case temperature 62 c, 450 w pulsed, 50 sec pulse width, 2.5% duty cycle r jc 0.27 0.04 c/w table 3. esd protection characteristics test methodology class human body model (per jesd22 - a114) 1b (minimum) machine model (per eia/jesd22 - a115) b (minimum) charge device model (per jesd22 - c101) iv (minimum) table 4. electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics (3) gate - source leakage current (v gs = 5 vdc, v ds = 0 vdc) i gss ? ? 10 adc drain - source breakdown voltage (i d = 50 ma, v gs = 0 vdc) v (br)dss 110 ? ? vdc zero gate voltage drain leakage current (v ds = 50 vdc, v gs = 0 vdc) i dss ? ? 10 adc zero gate voltage drain leakage current (v ds = 100 vdc, v gs = 0 vdc) i dss ? ? 10 adc on characteristics gate threshold voltage (3) (v ds = 10 vdc, i d = 320 adc) v gs(th) 1 1.6 2.5 vdc gate quiescent voltage (4) (v dd = 50 vdc, i d = 1400 madc, measured in functional test) v gs(q) 2 2.6 3.5 vdc drain - source on - voltage (3) (v gs = 10 vdc, i d = 1.58 adc) v ds(on) ? 0.25 ? vdc dynamic characteristics (3,5) reverse transfer capacitance (v ds = 50 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c rss ? 0.92 ? pf output capacitance (v ds = 50 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c oss ? 54.5 ? pf input capacitance (v ds = 50 vdc, v gs = 0 vdc 30 mv(rms)ac @ 1 mhz) c iss ? 373 ? pf functional tests (4) (in freescale broadband test fixture, 50 ohm system) v dd = 50 vdc, i dq = 1400 ma, p out = 90 w avg., f = 860 mhz, dvb - t ofdm single channel. acpr measured in 7.61 mhz channel bandwidth @ 4 mhz offset @ 4 khz bandwidth. power gain g ps 21.5 22.5 24.5 db drain efficiency d 26 28 ? % adjacent channel power ratio acpr ? -62 -59 dbc input return loss irl ? -4 -2 db 1. mttf calculator available at http://www.freescale.com/rf. select software & tools/development tools/calculators to access mttf calculators by product. 2. refer to an1955, thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf . select documentation/application notes - an1955. 3. each side of device measured separately. 4. measurement made with device in push - pull configuration. 5. part internally input matched. (continued)
mrf6vp3450hr6 MRF6VP3450HR5 mrf6vp3450hsr6 mrf6vp3450hsr5 3 rf device data freescale semiconductor table 4. electrical characteristics (t c = 25 c unless otherwise noted) (continued) characteristic symbol min typ max unit typical pulsed performances (in freescale broadband test fixture, 50 ohm system) v dd = 50 vdc, i dq = 1200 ma, p out = 520 w, f = 470 - 860 mhz, 50 sec pulse width, 2.5% duty cycle power gain g ps ? 20.5 ? db drain efficiency d ? 50 ? % input return loss irl ? -3 ? db p out @ 1 db compression point, pulsed cw (f = 470 - 860 mhz) p1db ? 520 ? w typical two - tone performances (in freescale broadband test fixture, 50 ohm system) v dd = 50 vdc, i dq = 1400 ma, p out = 450 w pep, f = 470 - 860 mhz, 100 khz tone spacing power gain g ps ? 22 ? db drain efficiency d ? 44 ? % intermodulation distortion im3 ? -29 ? dbc input return loss irl ? -2 ? db
4 rf device data freescale semiconductor mrf6vp3450hr6 MRF6VP3450HR5 mrf6vp3450hsr6 mrf6vp3450hsr5 figure 2. mrf6vp3450hr6(hsr6) test circuit schematic z32, z33 0.108 x 0.392 microstrip z34, z35 0.212 x 0.388 microstrip z36, z37 0.103 x 0.388 microstrip z38, z39 0.075 x 0.157 microstrip z40, z41 1.412 x 0.071 microstrip z42, z43 0.024 x 0.087 microstrip z44 0.550 x 0.065 microstrip pcb taconic rf35, 0.031?, r = 3.5 z1 0.343 x 0.065 microstrip z2, z3 0.039 x 0.200 microstrip z4, z5 1.400 x 0.590 microstrip z6, z7 0.059 x 0.118 microstrip z8, z9 0.059 x 0.118 microstrip z10, z11 0.150 x 0.394 microstrip z12, z13 0.359 x 0.394 microstrip z14, z15 0.308 x 0.394 microstrip rf input v bias z12 z14 c1 z7 z13 c2 dut rf output z6 z16 z15 z17 r1 z19 v supply c24 + b1 c34 z1 c44 c36 c38 r3 z18 c4 c3 z10 z11 z8 z9 z20 r4 z21 z5 z4 z3 z2 z44 z41 z40 z42 z43 z38 z39 c8 c7 c9 c10 z36 z37 printed balun output printed balun input c12 c11 v bias r2 c25 + b2 c35 c45 c37 c39 z16, z17 0.172 x 0.465 microstrip z18, z20 0.397 x 0.059 microstrip z19, z21 0.800 x 0.059 microstrip z22, z23 0.276 x 0.465 microstrip z24, z26 0.070 x 0.157 microstrip z25, z27 1.000 x 0.157 microstrip z28, z29 0.103 x 0.392 microstrip z30, z31 0.084 x 0.392 microstrip z22 z23 z24 c26 + c22 z25 c40 c28 v supply z26 c27 + c23 z27 c41 c29 c6 c5 z28 z29 z30 z31 c13 c14 z32 z33 z34 z35 z44 z38 z39 z40 z41 z42 z43 printed balun output top bottom z1 z6 z7 z4 z5 z2 z3 printed balun input top bottom
mrf6vp3450hr6 MRF6VP3450HR5 mrf6vp3450hsr6 mrf6vp3450hsr5 5 rf device data freescale semiconductor table 5. mrf6vp3450hr6(hsr6) test circuit component designations and values part description part number manufacturer b1, b2 short ferrite beads 2743019447 fair - rite c1, c2 12 pf chip capacitors atc100b120gt500xt atc c3 6.8 pf chip capacitor atc100b6r8bt500xt atc c4 10 pf chip capacitor atc100b100gt500xt atc c5, c6, c8, c9 6.8 pf chip capacitors atc800b6r8bt500xt atc c7, c10, c13, c14 10 pf chip capacitors atc800b100j500xt atc c11 4.7 pf chip capacitor atc800b4r7j500xt atc c12 3.9 pf chip capacitor atc800b3r9j500xt atc c22, c23 330 pf chip capacitors atc100b331gt500xt atc c24, c25 22 f electrolytic capacitors uud1v220mcl1gs nichicon c26, c27 220 f, 100 v electrolytic capacitors eevfk2a221m panasonic c28, c29 10 f, 50 v chip capacitors c5750x5r1h106mt tdk c34, c35 39 nf chip capacitors atc200b393kt50xt atc c36, c37 1000 pf chip capacitors atc100b102jt500xt atc c38, c39 470 pf chip capacitors atc100b471jt500xt atc c40, c41 2.2 f, 100 v chip capacitors hmk432bj225km - t taiyo yuden c44, c45 2.2 f, 50 v chip capacitors c3225x7r1h225mt tdk r1, r2 10 , 1/8 w chip resistors crcw120610r0fkea vishay r3, r4 1.5 , 1/8 w chip resistors crcw12061r50fkea vishay
6 rf device data freescale semiconductor mrf6vp3450hr6 MRF6VP3450HR5 mrf6vp3450hsr6 mrf6vp3450hsr5 figure 3. mrf6vp3450hr6(hsr6) test circuit component layout ? top figure 3a. mrf6vp3450hr6(hsr6) test circuit component layout ? bottom mrf6vp3450h rev. 4 b1 r1 c24 c34 c44 c36 c38 r3 c1 c2 c3 c4 c35 b2 r2 c25 c45 c39 c37 r4 c41 c27 c29 c23 c14 c5 c6 c11 c12 c13 c22 c7 c8 c10 c9 c40 c26 c28 cut out area cut out area
mrf6vp3450hr6 MRF6VP3450HR5 mrf6vp3450hsr6 mrf6vp3450hsr5 7 rf device data freescale semiconductor typical characteristics d g ps v dd = 50 vdc, i dq = 1200 ma, f = 860 mhz pulse width = 50 sec, duty cycle = 2.5% 50 1 1000 020 10 v ds , drain?source voltage (volts) figure 4. capacitance versus drain - source voltage c, capacitance (pf) 30 c iss 100 10 40 c oss c rss measured with 30 mv(rms)ac @ 1 mhz v gs = 0 vdc 1 100 110 10 v ds , drain?source voltage (volts) figure 5. dc safe operating area i d , drain current (amps) 100 24 10 0 60 100 22 21.5 20.5 50 40 30 p out , output power (watts) pulsed figure 6. pulsed power gain and drain efficiency versus output power g ps , power gain (db) d, drain efficiency (%) 21 18 1000 20 52 67 30 62 p in , input power (dbm) figure 7. pulsed cw output power versus input power 60 38 23.5 58 31 32 33 34 35 36 37 p out , output power (dbm) 16 24 0 23 22 p out , output power (watts) pulsed figure 8. pulsed power gain versus output power g ps , power gain (db) 100 21 600 700 figure 9. pulsed power gain and drain efficiency versus output power p out , output power (watts) pulsed g ps , power gain (db) 18 25 10 22 24 23 100 1000 v dd = 50 vdc, i dq = 1200 ma, f = 860 mhz pulse width = 50 sec, duty cycle = 2.5% 57 54 20 200 300 400 500 v dd = 40 v 45 v 50 v d 25 c t c = ?30 c 85 c g ps 19 21 20 v dd = 50 vdc, i dq = 1200 ma, f = 860 mhz pulse width = 50 sec, duty cycle = 2.5% t c = 25 c t j = 150 c 0 70 40 60 50 10 30 20 d , drain efficiency (%) 20 10 t j = 175 c t j = 200 c 22.5 23 19.5 19 18.5 5 15 25 35 45 55 actual ideal v dd = 50 vdc, i dq = 1200 ma, f = 860 mhz pulse width = 12 sec, duty cycle = 1% p1db = 57.15 dbm (519 w) 53 56 55 59 61 64 63 66 65 41 39 40 42 p3db = 57.85 dbm (610 w) p2db = 57.65 dbm (582 w) 19 18 17 ?30 c 25 c 85 c note: each side of device measured separately. note: each side of device measured separately.
8 rf device data freescale semiconductor mrf6vp3450hr6 MRF6VP3450HR5 mrf6vp3450hsr6 mrf6vp3450hsr5 typical characteristics ? two - tone figure 10. intermodulation distortion products versus output power ?80 ?20 10 7th order p out , output power (watts) pep v dd = 50 vdc, i dq = 1400 ma, f1 = 854 mhz f2 = 860 mhz, two?tone measurements 3rd order ?40 ?50 ?60 100 1000 imd, intermodulation distortion (dbc) ?70 5th order 5 figure 11. intermodulation distortion products versus tone spacing 10 ?10 0.1 7th order two?tone spacing (mhz) 5th order 3rd order ?30 ?40 ?50 160 imd, intermodulation distortion (dbc) figure 12. two - tone power gain versus output power 21 23 50 i dq = 1400 ma p out , output power (watts) pep 22.6 21.4 500 g ps , power gain (db) 22.2 21.8 1250 ma v dd = 50 vdc, f1 = 859.9 mhz, f2 = 860 mhz two?tone measurements, 100 khz tone spacing figure 13. third order intermodulation distortion versus output power p out , output power (watts) pep ?25 ?30 ?40 ?45 ?50 intermodulation distortion (dbc) imd, third order ?20 v dd = 50 vdc, f1 = 859.9 mhz, f2 = 860 mhz two?tone measurements, 100 khz tone spacing 500 50 ?70 ?20 v dd = 50 vdc, p out = 450 w (pep), i dq = 1400 ma two?tone measurements i dq = 700 ma 975 ma 1075 ma ?35 ?30 ?60 22.8 22.4 22 21.6 21.2 700 ma 975 ma 1075 ma 1250 ma 1400 ma
mrf6vp3450hr6 MRF6VP3450HR5 mrf6vp3450hsr6 mrf6vp3450hsr5 9 rf device data freescale semiconductor typical characteristics ? ofdm 12 0.0001 100 0 peak?to?average (db) figure 14. single - carrier dvb - t ofdm 10 1 0.1 0.01 0.001 2468 probability (%) 8k mode dvb?t ofdm 64 qam data carrier modulation 5 symbols 5 ?20 ?5 7.61 mhz f, frequency (mhz) figure 15. 8k mode dvb - t ofdm spectrum ?30 ?40 ?50 ?90 ?70 ?80 ?100 ?110 ?60 ?4 ?3 ?2 ?1 0 1 2 3 4 4 khz bw (db) 10 acpr measured at 4 mhz offset from center frequency figure 16. single - carrier dvb - t ofdm power gain versus output power 23 20 i dq = 1400 ma p out , output power (watts) avg. 100 200 g ps , power gain (db) 700 ma v dd = 50 vdc, f = 860 mhz 8k mode ofdm, 64 qam data carrier modulation, 5 symbols 22.5 22 21.5 20.5 20 21 acpr, adjacent channel power ratio (dbc) figure 17. single - carrier dvb - t ofdm acpr versus output power ?70 ?50 20 p out , output power (watts) avg. 100 200 ?60 v dd = 50 vdc, f = 860 mhz 8k mode ofdm, 64 qam data carrier modulation, 5 symbols i dq = 700 ma 1400 ma acpr, adjacent channel power ratio (dbc) figure 18. single - carrier dvb - t ofdm acpr power gain and drain efficiency versus output power 0 ?72 p out , output power (watts) avg. 65 ?46 30 20 ?48 10 ?52 d , drain efficiency (%), g ps , power gain (db) 60 300 35 25 ?50 100 ?54 ?56 d 25 c t c = ?30 c g ps acpr v dd = 50 vdc, i dq = 1400 ma f = 860 mhz, 8k mode ofdm 64 qam data carrier modulation 5 symbols 4 khz bw 8k mode dvb?t ofdm 64 qam data carrier modulation, 5 symbols 1075 ma 975 ma 1250 ma 975 ma 1250 ma 1075 ma 55 50 45 40 10 15 5 ?58 ?60 ?62 ?64 ?66 ?68 ?70 85 c ?30 c 85 c 25 c
10 rf device data freescale semiconductor mrf6vp3450hr6 MRF6VP3450HR5 mrf6vp3450hsr6 mrf6vp3450hsr5 typical characteristics ? 470 - 860 mhz 1000 17 23 0 60 p out , output power (watts) pulsed figure 19. broadband pulsed power gain and drain efficiency versus output power ? 470 - 860 mhz v dd = 50 vdc, i dq = 1200 ma pulse width = 50 sec, duty cycle = 2.5% 100 10 22 50 40 30 20 d , drain efficiency (%) g ps d g ps , power gain (db) 22.5 g ps , power gain (db) p1db (watts) 450 600 500 860 470 p1db g ps f, frequency (mhz) figure 20. pulsed power gain and drain efficiency versus frequency at p1db ? 470 - 860 mhz 27 25 20 70 60 40 30 d , drain efficiency (%) d 22 21 18 17 26 24 23 50 700 550 acpr, adjacent channel power ratio (dbc) figure 21. single - carrier dvb - t ofdm acpr, power gain and drain efficiency versus output power ? 470 - 860 mhz 0 ?75 p out , output power (watts) avg. 50 ?50 30 15 ?60 100 ?65 d , drain efficiency (%), g ps , power gain (db) g ps v dd = 50 vdc, i dq = 1400 ma, 8k mode ofdm 64 qam data carrier modulation, 5 symbols 35 3 300 20 d 860 mhz 20 19 650 25 acpr 860 mhz v dd = 50 vdc, p out = p1db, i dq = 1200 ma pulse width = 50 sec, duty cycle = 2.5% 21 21.5 20 20.5 19 19.5 18 18.5 17.5 10 665 mhz 470 mhz 860 mhz 665 mhz 470 mhz 500 530 560 590 620 650 680 710 740 770 800 830 40 5 10 45 10 ?55 ?70 470 mhz 665 mhz 665 mhz 470 mhz 860 mhz
mrf6vp3450hr6 MRF6VP3450HR5 mrf6vp3450hsr6 mrf6vp3450hsr5 11 rf device data freescale semiconductor typical characteristics ? 470 - 860 mhz g ps , power gain (db) irl, input return loss (db) ?8 ?2 ?6 irl g ps f, frequency (mhz) figure 22. single - carrier dvb - t ofdm power gain, drain efficiency and irl versus frequency ? 470 - 860 mhz 24 22 20 36 34 32 30 22 d , drain efficiency (%) d 19 18 16 23 21 20 0 ?4 17 860 470 500 530 560 590 620 650 680 710 740 770 800 830 28 26 24 v dd = 50 vdc, i dq = 1400 ma p out = 90 w avg., 8k mode ofdm 64 qam data carrier modulation, 5 symbols typical characteristics 250 10 8 90 t j , junction temperature ( c) figure 23. mttf versus junction temperature this above graph displays calculated mttf in hours when the device is operated at v dd = 50 vdc, p out = 90 w avg., and d = 28%. mttf calculator available at http://www.freescale.com/rf. select software & tools/development tools/calculators to access mttf calculators by product. 10 7 10 6 10 5 110 130 150 170 190 mttf (hours) 210 230
12 rf device data freescale semiconductor mrf6vp3450hr6 MRF6VP3450HR5 mrf6vp3450hsr6 mrf6vp3450hsr5 z load z source f = 470 mhz f = 860 mhz f = 470 mhz f = 860 mhz z o = 10 v dd = 50 vdc, i dq = 1400 ma, p out = 90 w avg. f mhz z source z load 470 2.81 - j1.88 5.52 + j2.34 650 6.46 + j1.21 7.46 + j2.26 860 3.90 + j2.09 2.60 + j3.73 z source = test circuit impedance as measured from gate to gate, balanced configuration. z load = test circuit impedance as measured from drain to drain, balanced configuration. figure 24. series equivalent source and load impedance z source z load input matching network device under test output matching network ? ?+ +
mrf6vp3450hr6 MRF6VP3450HR5 mrf6vp3450hsr6 mrf6vp3450hsr5 13 rf device data freescale semiconductor package dimensions
14 rf device data freescale semiconductor mrf6vp3450hr6 MRF6VP3450HR5 mrf6vp3450hsr6 mrf6vp3450hsr5
mrf6vp3450hr6 MRF6VP3450HR5 mrf6vp3450hsr6 mrf6vp3450hsr5 15 rf device data freescale semiconductor
16 rf device data freescale semiconductor mrf6vp3450hr6 MRF6VP3450HR5 mrf6vp3450hsr6 mrf6vp3450hsr5
mrf6vp3450hr6 MRF6VP3450HR5 mrf6vp3450hsr6 mrf6vp3450hsr5 17 rf device data freescale semiconductor product documentation refer to the following documents to aid your design process. application notes ? an1955: thermal measurement methodology of rf power amplifiers engineering bulletins ? eb212: using data sheet impedances for rf ldmos devices revision history the following table summarizes revisions to this document. revision date description 0 july 2008 ? initial release of data sheet 1 aug. 2008 ? corrected component designation part number for c34, 35 in table 5. test circuit component designation and values, p. 5 ? added note to fig. 4, capacitance versus drain - source voltage and fig. 5, dc safe operating area to denote that each side of device is measured separately, p. 7 ? adjusted imaginary component signs in fig. 24, series equivalent source and load impedance data table and replotted data, p. 12 2 sept. 2008 ? fig. 24, series equivalent source and load impedance, corrected z source copy to read ?test circuit impedance as measured from gate to gate, balanced configuration? and z load copy to read ?test circuit impedance as measured from gate to gate, balanced configuration?, p. 12
18 rf device data freescale semiconductor mrf6vp3450hr6 MRF6VP3450HR5 mrf6vp3450hsr6 mrf6vp3450hsr5 information in this document is provided solely to enable system and software implementers to use freescale semiconductor products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. freescale semiconductor reserves the right to make changes without further notice to any products herein. freescale semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does freescale semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ?typical? parameters that may be provided in freescale semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals?, must be validated for each customer application by customer?s technical experts. freescale semiconductor does not convey any license under its patent rights nor the rights of others. freescale semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the freescale semiconductor product could create a situation where personal injury or death may occur. should buyer purchase or use freescale semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold freescale semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that freescale semiconductor was negligent regarding the design or manufacture of the part. freescale and the freescale logo are trademarks of freescale semiconductor, inc. all other product or service names are the property of their respective owners. ? freescale semiconductor, inc. 2008. all rights reserved. how to reach us: home page: www.freescale.com web support: http://www.freescale.com/support usa/europe or locations not listed: freescale semiconductor, inc. technical information center, el516 2100 east elliot road tempe, arizona 85284 1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130 www.freescale.com/support europe, middle east, and africa: freescale halbleiter deutschland gmbh technical information center schatzbogen 7 81829 muenchen, germany +44 1296 380 456 (english) +46 8 52200080 (english) +49 89 92103 559 (german) +33 1 69 35 48 48 (french) www.freescale.com/support japan: freescale semiconductor japan ltd. headquarters arco tower 15f 1 - 8 - 1, shimo - meguro, meguro - ku, tokyo 153 - 0064 japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com asia/pacific: freescale semiconductor china ltd. exchange building 23f no. 118 jianguo road chaoyang district beijing 100022 china +86 10 5879 8000 support.asia@freescale.com for literature requests only: freescale semiconductor literature distribution center p.o. box 5405 denver, colorado 80217 1 - 800 - 441 - 2447 or +1 - 303 - 675 - 2140 fax: +1 - 303 - 675 - 2150 ldcforfreescalesemiconductor@hibbertgroup.com document number: mrf6vp3450h rev. 2, 9/2008

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